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etrontech em636165 etron technology, inc. no. 6, technology road v, science-based industrial park, hsinchu, taiwan 30077, r.o.c tel: (886)-3-5782345 fax: (886)-3-5778671 etron technology, inc., reserves the right to make changes to its products and specifications without notice. 1mega x 16 synchronous dram (sdram) (rev. 1.0, 10/2004) features fast access time: 5/5.5 ns fast clock rate: 166/143 mhz self refresh mode: standard and low power internal pipelined architecture 512k word x 16-bit x 2-bank programmable mode registers - cas# latency: 1, 2, or 3 - burst length: 1, 2, 4, 8, or full page - burst type: interleaved or linear burst - burst stop function individual byte controlled by ldqm and udqm auto refresh and self refresh 4096 refresh cycles/64ms cke power down mode single +3.3v 0.3v power supply interface: lvttl component type : known good die overview the em636165 sdram is a high-speed cmos synchronous dram containing 16 mbits. it is internally configured as a dual 512k word x 16 dram with a synchronous interface (all signals are registered on the positive edge of the clock signal, clk). each of the 512k x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. read and write accesses to the sdram are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. accesses begin with the registration of a bankactivate command which is then followed by a read or write command. the em636165 provides for programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. an auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. the refresh functions, either auto or self refresh are easy to use. by having a programmable mode register, the system can choose the most suitable modes to maximize its performance. these devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance pc applications. key specifications em636165 - 6/7/7l tck3 clock cycle time(min.) 6/7/7 ns tras row active time(max.) 36/42/42 ns tac3 access time from clk(max.) 5/5.5/5.5 ns trc row cycle time(min.) 54/63/63 ns ordering information operating temperature : 0~70 c part number frequency component type EM636165GD-6 166mhz die EM636165GD-7 143mhz die EM636165GD-7l 143mhz die
etrontech 1m x 16 sdram em636165 2 rev. 1.0 aug. 2004 block diagram refresh counter column counter address buffer a0 a11 control signal generator ldqm udqm clock buffer command decoder column decoder sense amplifier r o w d e c o d e r 2048 x 256 x 16 cell array (bank #0) sense amplifier column decoder r o w d e c o d e r 2048 x 256 x 16 cell array (bank #1) clk cke cs# ras# cas# we# dq0 dq15 dqs buffer mode register
etrontech 1m x 16 sdram em636165 3 rev. 1.0 aug. 2004 pin descriptions table 1. pin details of em636165 symbol type description clk input clock: clk is driven by the system clock. all sdram input signals are sampled on the positive edge of clk. clk also increments the internal burst counter and controls the output registers. cke input clock enable: cke activates(high) and deactivates(low) the clk signal. if cke goes low synchronously with clock(set- up and hold time same as other inputs), the internal clock is suspended from the next clock cycle and the state of output and burst address is frozen as long as the cke remains low. when both banks are in the idle state, deactivati ng the clock controls the entry to the power down and self refresh modes. cke is synchronous except after the device enters power down and self refresh modes, where cke becomes asynchronous until exiting the same mode. the input buffers, including clk, are disabled during power down and self refresh modes, providing low standby power. a11 input bank select: a11(bs) defines to which bank the bankactivate, read, write, or bankprecharge command is being applied. a0-a10 input address inputs: a0-a10 are sample d during the bankactivate command (row address a0-a10) and read/write command (column address a0- a7 with a10 defining auto precharge) to select one location out of the 256k available in the respective bank. during a precharge command, a10 is sampled to det ermine if both banks are to be precharged (a10 = high). the address inputs also provide the op-code during a mode register set command. cs# input chip select: cs# enables (sampled low) and disables (sampled high) the command decoder. all commands are mask ed when cs# is sampled high. cs# provides for external bank selection on systems with multiple banks. it is considered part of the command code. ras# input row address strobe: the ras# signal defines the operation commands in conjunction with the cas# and we# signals and is latched at the positive edges of clk. when ras# and cs# are asserted "low" and cas# is asserted "high," either the bankactivate command or the precharge command is selected by the we# signal. when the we# is asserted "high," the bankact ivate command is selected and the bank designated by bs is turned on to the active state. when the we# is asserted "low," the precharge command is selected and the bank designated by bs is switched to the idle state after the precharge operation. cas# input column address strobe: the cas# signal defines the operation commands in conjunction with the ras# and we# signals and is latched at the positive edges of clk. when ras# is held "high" and cs# is asserted "low," the column access is started by asserting cas# "low." then, the read or write command is selected by asserting we# "low" or "high." we# input write enable: the we# signal defines the operation commands in conjunction with the ras# and cas# signals and is latched at the positive edges of clk. the we# input is used to select the bankactivate or precharge command and read or write command.
etrontech 1m x 16 sdram em636165 4 rev. 1.0 aug. 2004 ldqm, udqm input data input/output mask: ldqm and udqm are byte specific, nonpersistent i/o buffer controls. the i/o buffers are placed in a high- z state when ld qm/udqm is sampled high. input data is masked when ldqm/udqm is sampled high during a write cycle. output data is masked (two- clock latency) when ldqm/udqm is sampled high during a read cycle. udqm masks dq15- dq8, and ldqm masks dq7-dq0. dq0-dq15 input/output data i/o: the dq0- 15 input and output data are synchronized with the positive edges of clk. the i/os are byte-maskable during reads and writes. nc - no connect: these pins should be left unconnected. v ddq supply dq power: provide isolated power to dqs for improved noise immunity. ( 3.3v 0.3v ) v ssq supply dq ground: provide isolated ground to dqs for improved noise immunity. ( 0 v ) v dd supply power supply: +3.3v 0.3v v ss supply ground
etrontech 1m x 16 sdram em636165 5 rev. 1.0 aug. 2004 operation mode fully synchronous operations are performed to latch the commands at the positive edges of clk. table 2 shows the truth table for the operation commands. table 2. truth table (note (1), (2) ) command state cke n-1 cke n dqm (6) a11 a 10 a 0-9 cs# ras# cas# we# bankactivate idle (3) h x x v v v l l h h bankprecharge any h x x v l x l l h l prechargeall any h x x x h x l l h l write active (3) h x x v l v l h l l write and autoprecharge active (3) h x x v h v l h l l read active (3) h x x v l v l h l h read and autoprecharge active (3) h x x v h v l h l h mode register set idle h x x v v v l l l l no-operation any h x x x x x l h h h burst stop active (4) h x x x x x l h h l device deselect any h x x x x x h x x x autorefresh idle h h x x x x l l l h selfrefresh entry idle h l x x x x l l l h idle l h x x x x h x x x selfrefresh exit (selfrefresh) l h h h clock suspend mode entry active h l x x x x x x x x any (5) h l x x x x h x x x power down mode entry l h h h clock suspend mode exit active l h x x x x x x x x any l h x x x x h x x x power down mode exit (powerdown) l h h h data write/output enable active h x l x x x x x x x data mask/output disable active h x h x x x x x x x note: 1. v=valid x=don't care l=low level h=high level 2. cke n signal is input level when commands are provided. cke n-1 signal is input level one clock cycle before the commands are provided. 3. these are states of bank designated by bs signal. 4. device state is 1, 2, 4, 8, and full page burst operation. 5. power down mode entry can not be asserted in the burst operation. when this command is asserted in the burst cycle, device state is clock suspend mode. 6. ldqm and udqm
etrontech 1m x 16 sdram em636165 6 rev. 1.0 aug. 2004 commands 1 bankprecharge command (ras# = "l", cas# = "h", we# = "l", a11 = v , a10 = "l", a0-a9 = don't care) the bankprecharge command precharges the bank disignated by a11 signal. the precharged bank is switched from the active state to the idle state. this command can be asserted anytime after t ras (min.) is satisfied from the bankactivate command in the desired bank. the maximum time any bank can be active is specified by t ras (max.). therefore, the precharge function must be performed in any active bank within t ras (max.). at the end of precharge, the precharged bank is still in the idle state and is ready to be activated again. 2 prechargeall command (ras# = "l", cas# = "h", we# = "l", a11 = don't care, a10 = "h", a0-a9 = don't care) the prechargeall command precharges both banks simultaneously and can be issued even if both banks are not in the active state. both banks are then switched to the idle state. 3 read command (ras# = "h", cas# = "l", we# = "h", a11= v , a9 = "l", a0-a7 = column address) the read command is used to read a burst of data on consecutive clock cycles from an active row in an active bank. the bank must be active for at least t rcd (min.) before the read command is issued. during read bursts, the valid data-out element from the starting column address will be available following the cas# latency after the issue of the read command. each subsequent data- out element will be valid by the next positive clock edge (refer to the following figure). the dqs go into high-impedance at the end of the burst unless other command is initiated. the burst length, burst sequence, and cas# latency are determined by the mode register, which is already programmed. a full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and continue). clk command cas# latency=1 t ck1 , dq's cas# latency=2 t ck2 , dq's cas# latency=3 t ck3 , dq's t0t 1t2t3t4t5t6t7t8 read anop nopnopnopnopnopnopnop dout a 0 dout a 1 dout a 2 dout a 3 dout a 0 dout a 1 dout a 2 dout a 3 dout a 0 dout a 1 dout a 2 dout a 3 burst read operation (burst length = 4, cas# latency = 1, 2, 3)
etrontech 1m x 16 sdram em636165 7 rev. 1.0 aug. 2004 the read data appears on the dqs subject to the values on the ldqm/udqm inputs two clocks earlier (i.e. ldqm/udqm latency is two clocks for output buffers). a read burst without the auto precharge function may be interrupted by a subsequent read or write command to the same bank or the other active bank before the end of the burst length. it may be interrupted by a bankprecharge/ prechargeall command to the same bank too. the interrupt coming from the read command can occur on any clock cycle following a previous read command (refer to the following figure). clk command cas# latency=1 t ck1 , dq's cas# latency=2 t ck2 , dq's cas# latency=3 t ck3 , dq's t0t 1t2t3t4t5t6t7t8 read aread bnopnopnopnopnopnopnop dout a 0 dout b 0 dout b 1 dout b 2 dout b 3 dout a 0 dout b 0 dout b 1 dout b 2 dout b 3 dout a 0 dout b 0 dout b 1 dout b 2 dout b 3 read interrupted by a read (burst length = 4, cas# latency = 1, 2, 3) the ldqm/udqm inputs are used to avoid i/o contention on the dq pins when the interrupt comes from a write command. the ldqm/udqm must be asserted (high) at least two clocks prior to the write command to suppress data-out on the dq pins. to guarantee the dq pins against i/o contention, a single cycle with high-impedance on the dq pins must occur between the last read data and the write command (refer to the following three figures). if the data output of the burst read occurs at the second clock of the burst write, the ldqm/udqm must be asserted (high) at least one clock prior to the write command to avoid internal bus contention. read anopnopnopnopwrite bnopnop clk dqm command dq's t0t 1t2t3t4t5t6t7t8 nop dout a 0 dinb 0 dinb 1 dinb 2 must be hi-z before the write command : "h" or "l" read to write interval (burst length 3 4, cas# latency = 3)
etrontech 1m x 16 sdram em636165 8 rev. 1.0 aug. 2004 clk dqm command cas# latency=1 t ck1 , dq's t0t 1t2t3t4t5t6t7t8 nopnopnopread awrite anopnopnop banka activate din a 0 din a 1 din a 2 din a 3 din a 0 din a 1 din a 2 din a 3 must be hi-z before the write command 1 clk interval cas# latency=2 t ck2 , dq's : "h" or "l" read to write interval (burst length 3 4, cas# latency = 1, 2) clk dqm command cas# latency=1 t ck1 , dq's t0t 1t2t3t4t5t6t7t8 nop read a nopwrite bnopnopnop din b 0 din b 1 din b 2 din b 3 din b 0 din b 1 din b 2 din b 3 must be hi-z before the write command cas# latency=2 t ck2 , dq's nop nop dout a 0 : "h" or "l" read to write interval (burst length 3 4, cas# latency = 1, 2) a read burst without the auto precharge function may be interrupted by a bankprecharge/ prechargeall command to the same bank. the following figure shows the optimum time that bankprecharge/ prechargeall command is issued in different cas# latency. clk command cas# latency=2 t ck2 , dq's t0t 1t2t3t4t5t6t7t8 read a nop nop nop nop activate nop nopprecharge cas# latency=3 t ck3 , dq's dout a 0 dout a 1 dout a 2 dout a 3 dout a 0 dout a 1 dout a 2 dout a 3 dout a 0 dout a 1 dout a 2 dout a 3 address cas# latency=1 t ck1 , dq's t rp bank, col a bank(s) bank, row read to precharge (cas# latency = 1, 2, 3)
etrontech 1m x 16 sdram em636165 9 rev. 1.0 aug. 2004 4 read and autoprecharge command (ras# = "h", cas# = "l", we# = "h", a11 = v , a10 = "h", a0-a7 = column address) the read and autoprecharge command automatically performs the precharge operation after the read operation. once this command is given, any subsequent command cannot occur within a time delay of { t rp (min.) + burst length } . at full-page burst, only the read operation is performed in this command and the auto precharge function is ignored. 5 write command (ras# = "h", cas# = "l", we# = "l", a11 = v , a10 = "l", a0-a7 = column address) the write command is used to write a burst of data on consecutive clock cycles from an active row in an active bank. the bank must be active for at least t rcd (min.) before the write command is issued. during write bursts, the first valid data-in element will be registered coincident with the write command. subsequent data elements will be registered on each successive positive clock edge (refer to the following figure). the dqs remain with high-impedance at the end of the burst unless another command is initiated. the burst length and burst sequence are determined by the mode register, which is already programmed. a full-page burst will continue until terminated (at the end of the page it will wrap to column 0 and continue). clk command t0t 1t2t3t4t5t6t7t8 din a 3 nopwrite a nop nop nop nop nop nopnop din a 0 din a 1 din a 2 dq0 - dq3 the first data element and the write are registered on the same clock edge. extra data is masked. don't care burst write operation (burst length = 4, cas# latency = 1, 2, 3) a write burst without the auto precharge function may be interrupted by a subsequent write, bankprecharge/prechargeall, or read command before the end of the burst length. an interrupt coming from write command can occur on any clock cycle following the previous write command (refer to the following figure). clk command t0t 1t2t3t4t5t6t7t8 din b 2 nopwrite a nop nop nop nop nop write bnop din a 0 din b 0 din b 1 dq's din b 3 1 clk interval write interrupted by a write (burst length = 4, cas# latency = 1, 2, 3)
etrontech 1m x 16 sdram em636165 10 rev. 1.0 aug. 2004 the read command that interrupts a write burst without auto precharge function should be issued one cycle after the clock edge in which the last data-in element is registered. in order to avoid data contention, input data must be removed from the dqs at least one clock cycle before the first read data appears on the outputs (refer to the following figure). once the read command is registered, the data inputs will be ignored and writes will not be executed. clk command t0t 1t2t3t4t5t6t7t8 dout b 2 nopwrite a nop nop nop nop nop read bnop din a 0 dout b 0 dout b 1 cas# latency=1 t ck1 , dq's dout b 3 don't care din a 0 dout b 2 dout b 0 dout b 1 dout b 3 din a 0 don't care don't care dout b 2 dout b 0 dout b 1 dout b 3 input data for the write is masked. input data must be removed from the dq's at least one clock cycle before the read data appears on the outputs to avoid data contention. cas# latency=2 t ck2 , dq's cas# latency=3 t ck3 , dq's write interrupted by a read (burst length = 4, cas# latency = 1, 2, 3) the bankprecharge/prechargeall command that interrupts a write burst without the auto precharge function should be issued m cycles after the clock edge in which the last data-in element is registered, where m equals t wr /t ck rounded up to the next whole number. in addition, the ldqm/udqm signals must be used to mask input data, starting with the clock edge following the last data-in element and ending with the clock edge on which the bankprecharge/prechargeall command is entered (refer to the following figure). clk t0t 1t2t3t4t5t6 write command bank (s) row nop nop prechargenopnopactivate bank col n din n din n + 1 dqm address dq t wr t rp : don't care note: the ldqm/udqm can remain low in this example if the length of the write burst is 1 or 2. write to precharge
etrontech 1m x 16 sdram em636165 11 rev. 1.0 aug. 2004 6 write and autoprecharge command (refer to the following figure) (ras# = "h", cas# = "l", we# = "l", a11 = v , a10 = "h", a0-a7 = column address) the write and autoprecharge command performs the precharge operation automatically after the write operation. once this command is given, any subsequent command can not occur within a time delay of { (burst length -1) + t wr + t rp (min.) } . at full-page burst, only the write operation is performed in this command and the auto precharge function is ignored. clk command t0t 1t2t3t4t5t6t7t8 nopnop nop nop nop nopnop din a 0 din a 1 cas# latency=1 t ck1 , dq's cas# latency=2 t ck2 , dq's cas# latency=3 t ck3 , dq's din a 0 din a 1 din a 0 din a 1 t dal * * * t dal = t wr + t rp * begin autoprecharge bank can be reactivated at completion of t dal bank a activate write a autoprecharge t dal t dal burst write with auto-precharge (burst length = 2, cas# latency = 1, 2, 3) 7 mode register set command (ras# = "l", cas# = "l", we# = "l", a11 = v , a10 = v , a0-a9 = register data) the mode register stores the data for controlling the various operating modes of sdram. the mode register set command programs the values of cas# latency, addressing mode and burst length in the mode register to make sdram useful for a variety of different applications. the default values of the mode register after power-up are undefined; therefore this command must be issued at the power-up sequence. the state of pins a0~a9 and a11 in the same cycle is the data written to the mode register. one clock cycle is required to complete the write in the mode register (refer to the following figure). the contents of the mode register can be changed using the same command and the clock cycle requirements during operation as long as both banks are in the idle state.
etrontech 1m x 16 sdram em636165 12 rev. 1.0 aug. 2004 ras# t0t 1t2t3t4t5t6t7t8t9t10 clk cke cs# cas# we# a11 a10 a0-a9 dqm dq t ck2 clock min. address key t rp hi-z prechargeall mode register set command any command mode register set cycle (cas# latency = 1, 2, 3) the mode register is divided into various fields depending on functionality. burst length field (a2~a0) this field specifies the data length of column access using the a2~a0 pins and selects the burst length to be 1, 2, 4, 8, or full page. a2 a1 a0 burst length 0 0 0 1 0 0 1 2 0 1 0 4 0 1 1 8 1 0 0 reserved 1 0 1 reserved 1 1 0 reserved 1 1 1 full page
etrontech 1m x 16 sdram em636165 13 rev. 1.0 aug. 2004 addressing mode select field (a3) the addressing mode can be one of two modes, interleave mode or sequential mode. sequential mode supports burst length of 1, 2, 4, 8, or full page, but interleave mode only supports burst length of 4 and 8. a3 addressing mode 0 sequential 1 interleave --- addressing sequence of sequential mode an internal column address is performed by increasing the address from the column address which is input to the device. the internal column address is varied by the burst length as shown in the following table. when the value of column address, (n + m), in the table is larger than 255, only the least significant 8 bits are effective. data n 0 1 2 3 4 5 6 7 - 255 256 257 - column address n n+1 n+2 n+3 n+4 n+5 n+6 n+7 - n+255 n n+1 - 2 words: burst length 4 words: 8 words: full page: column address is repeated until terminated. --- addressing sequence of interleave mode a column access is started in the input column address and is performed by inverting the address bits in the sequence shown in the following table. data n column address burst length data 0 a7 a6 a5 a4 a3 a2 a1 a0 data 1 a7 a6 a5 a4 a3 a2 a1 a0# 4 words data 2 a7 a6 a5 a4 a3 a2 a1# a0 data 3 a7 a6 a5 a4 a3 a2 a1# a0# 8 words data 4 a7 a6 a5 a4 a3 a2# a1 a0 data 5 a7 a6 a5 a4 a3 a2# a1 a0# data 6 a7 a6 a5 a4 a3 a2# a1# a0 data 7 a7 a6 a5 a4 a3 a2# a1# a0# cas# latency field (a6~a4) this field specifies the number of clock cycles from the assertion of the read command to the first read data. the minimum whole value of cas# latency depends on the frequency of clk. the minimum whole value satisfying the following formula t cac (min) (cas# latency) x (t ck ) must be programmed into this field. a6 a5 a4 cas# latency 0 0 0 reserved 0 0 1 1 clock 0 1 0 2 clocks 0 1 1 3 clocks 1 x x reserved
etrontech 1m x 16 sdram em636165 14 rev. 1.0 aug. 2004 test mode field (a8~a7) these two bits are used to enter the test mode and must be programmed to "00" in normal operation. a8 a7 test mode 0 0 normal mode 0 1 vendor use only 1 x vendor use only single write mode (a9) this bit is used to select the write mode. when the bs bit is "0", the burst-read-burst- write mode is selected. when the bs bit is "1", the burst-read-single-write mode is selected. a9 single write mode 0 burst-read-burst-write 1 burst-read-single-write note: a10 and a11 should stay l during mode set cycle. 8 no-operation command (ras# = "h", cas# = "h", we# = "h") the no-operation command is used to perform a nop to the sdram which is selected (cs# is low). this prevents unwanted commands from being registered during idle or wait states. 9 burst stop command (ras# = "h", cas# = "h", we# = "l") the burst stop command is used to terminate either fixed-length or full-page bursts. this command is only effective in a read/write burst without the auto precharge function. the terminated read burst ends after a delay equal to the cas# latency (refer to the following figure). the termination of a write burst is shown in the following figure. clk command t0t 1t2t3t4t5t6t7t8 read a nop nop nop nop nop nop nopburst stop dout a 0 dout a 1 dout a 2 dout a 3 cas# latency=1 t ck1 , dq's cas# latency=2 t ck2 , dq's cas# latency=3 t ck3 , dq's dout a 0 dout a 1 dout a 2 dout a 3 dout a 0 dout a 1 dout a 2 dout a 3 the burst ends after a delay equal to the cas# latency. termination of a burst read operation (burst length 4, cas# latency = 1, 2, 3)
etrontech 1m x 16 sdram em636165 15 rev. 1.0 aug. 2004 clk command t0t 1t2t3t4t5t6t7t8 nopwrite a nop nop nop nop nop nopburst stop cas# latency=1, 2, 3 dq's din a 0 din a 1 din a 2 don't care input data for the write is masked. termination of a burst write operation (burst length = x, cas# latency = 1, 2, 3) 10 device deselect command (cs# = "h") the device deselect command disables the command decoder so that the ras#, cas#, we# and address inputs are ignored, regardless of whether the clk is enabled. this command is similar to the no operation command. 11 autorefresh command (refer to figures 3 & 4 in timing waveforms) (ras# = "l", cas# = "l", we# = "h",cke = "h", a11 = don t care, a0-a9 = don't care) the autorefresh command is used during normal operation of the sdram and is analogous to cas#-before-ras# (cbr) refresh in conventional drams. this command is non-persistent, so it must be issued each time a refresh is required. the addressing is generated by the internal refresh controller. this makes the address bits a "don't care" during an autorefresh command. the internal refresh counter increments automatically on every auto refresh cycle to all of the rows. the refresh operation must be performed 2048 times within 32ms. the time required to complete the auto refresh operation is specified by t rc (min.). to provide the autorefresh command, both banks need to be in the idle state and the device must not be in power down mode (cke is high in the previous cycle). this command must be followed by nops until the auto refresh operation is completed. the precharge time requirement, t rp (min), must be met before successive auto refresh operations are performed. 12 selfrefresh entry command (refer to figure 5 in timing waveforms) (ras# = "l", cas# = "l", we# = "h", cke = "l", a0-a9 = don't care) the selfrefresh is another refresh mode available in the sdram. it is the preferred refresh mode for data retention and low power operation. once the selfrefresh command is registered, all the inputs to the sdram become "don't care" with the exception of cke, which must remain low. the refresh addressing and timing is internally generated to reduce power consumption. the sdram may remain in selfrefresh mode for an indefinite period. the selfrefresh mode is exited by restarting the external clock and then asserting high on cke (selfrefresh exit command). 13 selfrefresh exit command (refer to figure 5 in timing waveforms) (cke = "h", cs# = "h" or cke = "h", ras# = "h", cas# = "h", we# = "h") this command is used to exit from the selfrefresh mode. once this command is registered, nop or device deselect commands must be issued for t rc (min.) because time is required for the completion of any bank currently being internally refreshed. if auto refresh cycles in bursts are performed during normal operation, a burst of 4096 auto refresh cycles should be completed just prior to entering and just after exiting the selfrefresh mode.
etrontech 1m x 16 sdram em636165 16 rev. 1.0 aug. 2004 14 clock suspend mode entry / powerdown mode entry command (refer to figures 6, 7, and 8 in timing waveforms) (cke = "l") when the sdram is operating the burst cycle, the internal clk is suspended(masked) from the subsequent cycle by issuing this command (asserting cke "low"). the device operation is held intact while clk is suspended. on the other hand, when both banks are in the idle state, this command performs entry into the powerdown mode. all input and output buffers (except the cke buffer) are turned off in the powerdown mode. the device may not remain in the clock suspend or powerdown state longer than the refresh period (64ms) since the command does not perform any refresh operations. 15 clock suspend mode exit / powerdown mode exit command (refer to figures 6, 7, and 8 in timing waveforms, cke= "h") when the internal clk has been suspended, the operation of the internal clk is reinitiated from the subsequent cycle by providing this command (asserting cke "high"). when the device is in the powerdown mode, the device exits this mode and all disabled buffers are turned on to the active state. t pde (min.) is required when the device exits from the powerdown mode. any subsequent commands can be issued after one clock cycle from the end of this command. 16 data write / output enable, data mask / output disable command (ldqm/udqm = "l", "h") during a write cycle, the ldqm/udqm signal functions as a data mask and can control every word of the input data. during a read cycle, the ldqm/udqm functions as the controller of output buffers. ldqm/udqm is also used for device selection, byte selection and bus control in a memory system. ldqm controls dq0 to dq7, udqm controls dq8 to dq15.
etrontech 1m x 16 sdram em636165 17 rev. 1.0 aug. 2004 absolute maximum rating rating symbol item 6 / 7 /7l unit note v in , v out input, output voltage - 1.0 ~ 4.6 v 1 v dd , v ddq power supply voltage -1.0 ~ 4.6 v 1 t opr operating temperature 0 ~ 70 c 1 t stg storage temperature - 55 ~ 125 c 1 p d power dissipation 1 w 1 i out short circuit output current 50 ma 1 recommended d.c. operating conditions (ta = -0~70 c) symbol parameter min. typ. max. unit note v dd power supply voltage 3.0 3.3 3.6 v 2 v ddq power supply voltage(for i/o buffer) 3.0 3.3 3.6 v 2 v ih lvttl input high voltage 2.0 - - v ddq +0.3 v 2 v il lvttl input low voltage - 0.3 - - 0.8 v 2
etrontech 1m x 16 sdram em636165 18 rev. 1.0 aug. 2004 recommended d.c. operating conditions (v dd = 3.3v 0.3v) 1. ta = 0~70 c - 6 / 7 - 7l description/test condition symbol max. max. unit note operating current t rc 3 t rc (min), outputs open, input signal one transition per one cycle 1 bank operation i dd1 115/100 45 3 precharge standby current in non-power down mode t ck = t ck (min), cs# 3 v ih , cke = v ih input signals are changed once during 30ns. i dd2n 90/85 15 3 precharge standby current in power down mode t ck = t ck (min), cke v il (max) i dd2p 2 0.8 3 precharge standby current in power down mode t ck = , cke v il (max) i dd2ps 2 0.8 active standby current in power down mode cke v il (max), t ck = t ck (min) i dd3p 2 2 ma 3 active standby current in non-power down mode cke 3 v ih (min), t ck = t ck (min) i dd3n 90/80 20 operating current (burst mode) t ck =t ck (min), outputs open, multi-bank interleave,gapless data i dd4 150/140 45 3, 4 refresh current t rc 3 t rc (min) i dd5 100/90 45 3 self refresh current v ih 3 v dd - 0.2, 0v v il 0.2v i dd6 2 0.6 parameter description min. max. unit note i il input leakage current ( 0v v in v dd , all other pins not under test = 0v ) - 10 10 m a i ol output leakage current output disable, 0v v out v ddq ) - 10 10 m a v oh lvttl output "h" level voltage ( i out = -2ma ) 2.4 - - v v ol lvttl output "l" level voltage ( i out = 2ma ) - - 0.4 v
etrontech 1m x 16 sdram em636165 19 rev. 1.0 aug. 2004 electrical characteristics and recommended a.c. operating conditions (v dd = 3.3v 0.3v, ta = 0~70 c) (note: 5, 6, 7, 8) - 6 / 7 / 7l symbol a.c. parameter min. max. unit note t rc row cycle time (same bank) 54/63/63 9 t rcd ras# to cas# delay (same bank) 16/16/16 9 t rp precharge to refresh/row activate command (same bank) 16/16/16 ns 9 t rrd row activate to row activate delay (different banks) 12/14/14 9 t ras row activate to precharge time (same bank) 36/42/42 100,000 t wr write recovery time 1/1/1 cycle t ck1 cl* = 1 20/20/20 t ck2 clock cycle time cl* = 2 7.5/8/8 10 t ck3 cl* = 3 6/7/7 t ch clock high time 2/2.5/2.5 ns 11 t cl clock low time 2/2.5/2.5 11 t ac1 access time from clk cl* = 1 8/13/13 t ac2 (positive edge) cl* = 2 6/6.5/6.5 11 t ac3 cl* = 3 5/5.5/5.5 t ccd cas# to cas# delay time 1/1/1 cycle t oh data output hold time 2/2/2 10 t lz data output low impedance 1/1/1 t hz data output high impedance 4/5/5 8 t is data/address/control input set-up time 2/2/2 ns 11 t ih data/address/control input hold time 1/1/1 11 t pde powerdown exit set-up time 6/7/7 t ref refresh time 64 ms * cl is cas# latency. note: 1. stress greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. 2. all voltages are referenced to v ss . 3. these parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of t ck and t rc . input signals are changed one time during t ck . 4. these parameters depend on the output loading. specified values are obtained with the output open. 5. power-up sequence is described in note 10. 6. a.c. test conditions
etrontech 1m x 16 sdram em636165 20 rev. 1.0 aug. 2004 lvttl interface reference level of output signals 1.4v / 1.4v output load reference to the under output load (b) input signal levels 2.4v / 0.4v transition time (rise and fall) of input signals 1ns reference level of input signals 1.4v 3.3v 1.2k w 870 w 30pf output 1.4v 50 w output 30pf 50 w z0= lvttl d.c. test load (a) lvttl a.c. test load (b) 7. transition times are measured between v ih and v il . transition(rise and fall) of input signals are in a fixed slope (1 ns). 8. t hz defines the time in which the outputs achieve the open circuit condition and are not at reference levels. 9. these parameters account for the number of clock cycle and depend on the operating frequency of the clock as follows: the number of clock cycles = specified value of timing/clock cycle time (count fractions as a whole number) 10.if clock rising time is longer than 1 ns, ( t r / 2 -0.5) ns should be added to the parameter. 11.assumed input rise and fall time t t ( t r & t f ) = 1 ns if t r or t f is longer than 1 ns, transient time compensation should be considered, i.e., [(tr + tf)/2 - 1] ns should be added to the parameter. 12. power up sequence power up must be performed in the following sequence. 1) power must be applied to v dd and v ddq (simultaneously) when all input signals are held "nop" state and both cke = "h" and ldqm/udqm = "h." the clk signals must be started at the same time. 2) after power-up, a pause of 200 m seconds minimum is required. then, it is recommended that ldqm/udqm is held "high" (v dd levels) to ensure dq output is in high impedance. 3) both banks must be precharged. 4) mode register set command must be asserted to initialize the mode register. 5) a minimum of 2 auto-refresh dummy cycles must be required to stabilize the internal circuitry of the device.
etrontech 1m x 16 sdram em636165 21 rev. 1.0 aug. 2004 timing waveforms figure 1. ac parameters for write timing (burst length=4, cas# latency=2) a11 t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 t ch t cl t ck2 t is t is t ih begin autoprecharge bank a begin autoprecharge bank b t is t ih t is rax rbx rbx cax rbx cbxray ray cay raz raz rby rby t rcd t dal t rc t is t ih t wr t rp t rrd ax0ax1ax2ax3bx0bx1bx2bx3ay0ay1ay2ay3 activate command bank a write with autoprecharge command bank a activate command bank b write with autoprecharge command ban k b activate command bank a write command bank a precharge command bank a activate command bank a activate command bank b clk cke cs# ras# cas# we# a10 a0-a9 dqm dq hi-z
etrontech 1m x 16 sdram em636165 22 rev. 1.0 aug. 2004 figure 2. ac parameters for read timing (burst length=2, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13 clk cke cs# ras# cas# we# a11 a10 a0-a9 dqm dq t ch t cl t ck2 t is t is t ih begin autoprecharge bank b t ih t ih t is rax rax caxrbx rbx cbx ray ray t rrd t ras t rc t rcd t ac2 t lz t oh t hz ax0 ax1 bx0bx1 t rp activate command bank a read command bank a activate command bank b read with auto precharge command ban k b precharge command bank a activate command bank a hi-z t ac2 t hz
etrontech 1m x 16 sdram em636165 23 rev. 1.0 aug. 2004 figure 3. auto refresh (cbr) (burst length=4, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a11 a10 a0-a9 dqm dq t ck2 rax raxcax t rp t rc ax0 ax1 ax2 ax3 prechargeall command autorefresh command autorefresh command activate command bank a read command bank a t rc
etrontech 1m x 16 sdram em636165 24 rev. 1.0 aug. 2004 figure 4. power on sequene and auto refresh (cbr) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a11 a10 a0-a9 dqm dq t ck2 high level is reauired minimum of 2 refresh cycles are required hi-z t rp t rc address key inputs must be sta ble fo r 200 m s prechargeall command 1st autorefresh command 2nd auto refresh command mode register set command any command
etrontech 1m x 16 sdram em636165 25 rev. 1.0 aug. 2004 figure 5. self refresh entry & exit cycle clk cke cs# ras# cas# a11 a0-a9 we# dqm t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 t12 t13 t14 t15 t16 t17 t18 t19 dq * note 1 *note 2 t is *note 3 *note 4 t rc(min) *note 7 *note 5 *note 6 *note 8 *note 8 hi-z hi-z sel f refr esh en ter self refresh exit aut oref resh t srx t pde note: to enter selfrefresh mode 1. cs#, ras# & cas# with cke should be low at the same clock cycle. 2. after 1 clock cycle, all the inputs including the system clock can be don't care except for cke. 3. the device remains in selfrefresh mode as long as cke stays "low". once the device enters selfrefresh mode, minimum t ras is required before exit from selfrefresh. to exit selfrefresh mode 1. system clock restart and be stable before returning cke high. 2. enable cke and cke should be set high for minimum time of t srx . 3. cs# starts from high. 4. minimum t rc is required after cke going high to complete selfrefresh exit. 5. 2048 cycles of burst autorefresh is required before selfrefresh entry and after selfrefresh exit if the system uses burst refresh.
etrontech 1m x 16 sdram em636165 26 rev. 1.0 aug. 2004 figure 6. clock suspension during burst read (using cke) (burst length=4, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a11 a10 a0-a9 dqm dq t ck2 rax rax cax hi-z ax0ax1 ax2 ax3 activate command bank a read command bank a clock suspend 1 cycle clock suspend 2 cycles clock suspend 3 cycles t hz note: cke to clk disable/enable = 1 clock
etrontech 1m x 16 sdram em636165 27 rev. 1.0 aug. 2004 figure 7. clock suspension during burst write (using cke) (burst length = 4, cas# latency = 2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21 t2 2 clk cke cs# ras# cas# we# a11 a10 a0-a9 dqm dq t ck2 rax raxcax hi-z dax0 activate command bank a write command bank a clock suspend 2 cycles clock suspend 3 cycles dax1 dax2 dax3 clock suspend 1 cycle note: cke to clk disable/enable = 1 clock
etrontech 1m x 16 sdram em636165 28 rev. 1.0 aug. 2004 figure 8. power down mode and clock mask (burst lenght=4, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a11 a10 a0~a9 dqm dq t ck2 t is t pde rax rax cax t hz ax3 ax2 ax1 ax0 activate command bank a power down mode entry power down mode exit read command bank a clock mask start clock mask end precharge command bank a power down mode entry precharge standby any command power down mode exit hi-z valid active standby
etrontech 1m x 16 sdram em636165 29 rev. 1.0 aug. 2004 figure 9. random column read (page within same bank) (burst length=4, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck2 activate command bank a read command bank a read command bank a precharge command bank a aw0aw1aw2aw3ax0ax1 ay0 ay1ay2ay3 raw raw cawcax cay read command bank a hi-z caz az0 az1az2az3 read command bank a activate command bank a raz raz
etrontech 1m x 16 sdram em636165 30 rev. 1.0 aug. 2004 figure 10. random column write (page within same bank) (burst length=4, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck2 activate command bank a write command ban k b write command ban k b precharge command ban k b dbw0dbw1dbw2dbw3dbx0dbx1 dby0 dby1dby2dby3 rbw rbw cbwcbx cby write command ban k b hi-z cbz dbz0 dbz1 dbz2dbz3 write command ban k b activate command ban k b rbz rbz
etrontech 1m x 16 sdram em636165 31 rev. 1.0 aug. 2004 figure 11. random row read (interleaving banks) (burst length=8, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck2 activate command bank b activate command bank a precharge command bank b bx0bx1bx2bx3bx4bx5bx6bx7 ax0 ax1 rbx rbx rby read command bank b hi-z cby read command bank b high rax read command bank a activate command bank b by0by1 ax2ax3 ax4ax5 ax6ax7 cbx cax rax rby t rcd t ac2 t rp
etrontech 1m x 16 sdram em636165 32 rev. 1.0 aug. 2004 figure 12.1. random row write (interleaving banks) (burst length=8, cas# latency=1) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck1 activate command bank a activate command bank b precharge command bank a dax0dax1dax2dax3dax4dax5 dax6 dax7dbx0dbx1 rax rax ray write command bank a hi-z cay high rbx precharge command bank b dbx7 day3 dbx2dbx3dbx4dbx5dbx6 cax cbx rbx ray t rcd day0day1day2 write command bank a write command bank b activate command bank a t rp t wr
etrontech 1m x 16 sdram em636165 33 rev. 1.0 aug. 2004 figure 12.2. random row write (interleaving banks) (burst length=8, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck2 activate command bank a activate command bank b precharge command bank a dax0dax1dax2dax3dax4dax5 dax6 dax7dbx0dbx1 rax rax ray write command bank a hi-z cay high rbx precharge command ban k b dbx7 dbx2dbx3dbx4dbx5dbx6 caxcbx rbx ray t rcd write command bank a write command bank b activate command bank a day3 day0day1day2day4 t wr* t rp t wr* * t wr > t wr (min.)
etrontech 1m x 16 sdram em636165 34 rev. 1.0 aug. 2004 figure 12.3. random row write (interleaving banks) (burst length=8, cas# latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck3 activate command bank a activate command bank b precharge command bank a dax0dax1 dax2dax3dax4dax5 dax6 dax7dbx0dbx1 rax raxray write command bank a hi-z cay high rbx precharge command bank b dbx7 dbx2dbx3dbx4 dbx5dbx6 caxcbx rbx ray t rcd write command bank a write command bank b activate command bank a day3 day0day1day2 t wr* t rp t wr* * t wr > t wr (min.)
etrontech 1m x 16 sdram em636165 35 rev. 1.0 aug. 2004 figure 13.1. read and write cycle (burst length=4, cas# latency=1) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck1 activate command bank a the write data is masked with a zero clock latency read command bank a ax0ax1ax2ax3day0day1 hi-z precharge command bank b az3 day3az0az1 read command bank a write command bank a the read data is masked with a two clock latency rax raxcax caycaz
etrontech 1m x 16 sdram em636165 36 rev. 1.0 aug. 2004 figure 13.2. read and write cycle (burst length=4, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck2 activate command bank a the write data is masked with a zero clock la ten cy read command bank a ax0ax1ax2ax3day0day1 hi-z az3 day3az0az1 read command bank a write command bank a the read data is masked with a two clock la ten cy rax raxcax cay caz
etrontech 1m x 16 sdram em636165 37 rev. 1.0 aug. 2004 figure 13.3. read and write cycle (burst length=4, cas# latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck3 activate command bank a the write data is masked with a zero clock la ten cy read command bank a ax0ax1ax2ax3day0day1 hi-z az3 day3az0az1 read command bank a write command bank a the read data is masked with a two clock la ten cy rax rax cax caycaz
etrontech 1m x 16 sdram em636165 38 rev. 1.0 aug. 2004 figure 14.1. interleaving column read cycle (burst length=4, cas# latency=1) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck1 activate command bank a read command bank b precharge command bank a bw0bw1bx0bx1by1ay0 hi-z bz0 read command bank a read command bank a rax rax ax0ax1ax2ax3by0ay1bz1 bz2bz3 activate command bank b read command bank b read command bank b read command bank b precharge command bank b t rcd t ac1 rax rbw rbw cbw cbx cby cay cbz
etrontech 1m x 16 sdram em636165 39 rev. 1.0 aug. 2004 figure 14.2. interleaving column read cycle (burst length=4, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck2 activate command bank a read command bank b precharge command bank a bw0bw1bx0bx1by1ay0 hi-z bz0 read command bank a read command bank a rax rax ax0ax1ax2ax3by0ay1bz1 bz2bz3 activate command bank b read command bank b read command bank b read command bank b precharge command bank b t rcd t ac2 cay rax rax cbw cbxcbycaycbz
etrontech 1m x 16 sdram em636165 40 rev. 1.0 aug. 2004 figure 14.3. interleaved column read cycle (burst length=4, cas# latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck3 activate command bank a prechaerge command bank b bx0bx1by0by1bz1ay0 hi-z ay2 read command bank a read command bank a rax rax ax0ax1ax2ax3bz0ay1ay3 activate command ban k b read command bank b read command bank b read command bank b precharge command bank a t rcd t ac3 caxrbx rbx cbx cby cbz cay
etrontech 1m x 16 sdram em636165 41 rev. 1.0 aug. 2004 figure 15.1. interleaved column write cycle (burst length=4, cas# latency=1) t0t 1t2t3t4t5t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck1 activate command bank a write command bank b dbw0dbw1dbx0dbx1dby1day0 hi-z write command bank a precharge command bank a rax rax dax0 dax1dax2dax3dby0day1dbz0 activate command bank b write command bank b write command bank b write command bank a precharge command bank b t rcd caxrbw rbw cbw cbx cby cay dbz1 dbz2 dbz3 write command bank b t rrd t rp t wr t rp cbz t6
etrontech 1m x 16 sdram em636165 42 rev. 1.0 aug. 2004 figure 15.2. interleaved column write cycle (burst length=4, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# a10 a0~a9 dqm dq a11 t ck2 activate command bank a write command bank b dbw0dbw1dbx0dbx1dby1day0 hi-z write command bank a precharge command bank a rax rax dax0 dax1dax2dax3dby0day1dbz0 activate command bank b write command bank b write command bank b write command bank a precharge command bank b t rcd cax rbw rbw cbwcbxcby cay dbz1 dbz2 dbz3 write command bank b t rrd t rp t wr t rp cbz we#
etrontech 1m x 16 sdram em636165 43 rev. 1.0 aug. 2004 figure 15.3. interleaved column write cycle (burst length=4, cas# latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# a10 a0~a9 dqm dq a11 t ck3 activate command bank a write command bank b dbw0dbw1dbx0dbx1dby1day0 hi-z write command bank a precharge command bank a rax rax dax0 dax1dax2dax3dby0day1dbz0 activate command bank b write command bank b write command bank b write command bank a precharge command bank b t rcd caxrbw rbw cbwcbxcby cay dbz1 dbz2 dbz3 write command bank b t rrd > t rrd(min) t rp t wr t wr(min) cbz we#
etrontech 1m x 16 sdram em636165 44 rev. 1.0 aug. 2004 figure 16.1. auto precharge after read burst (burst length=4, cas# latency=1) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck1 activate command bank a activate command bank b bx0bx1bx2bx3ay1ay2 hi-z read command bank a rax rax rbx ax0 ax1ax2ax3ay0ay3by0 activate command bank b activate command bank b rbx cbx cay rbycby by1 by2 by3 rbz high bz0 bz1 bz2 bz3 read with auto precharge command bank b read with auto precharge command bank a read with auto precharge command bank b read with auto precharge command ban k b cax rbyrbz cbz
etrontech 1m x 16 sdram em636165 45 rev. 1.0 aug. 2004 figure 16.2. auto precharge after read burst (burst length=4, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck2 activate command bank a activate command bank a bx0bx1bx2bx3ay1ay2 hi-z read command bank a rax rax rbx ax0 ax1ax2ax3ay0ay3by0 activate command bank b activate command bank b rbx cbx rby raycby by1 by2 by3 high az0 az1 az2 read with auto precharge command ban k b read with auto precharge command bank a read with auto precharge command ban k b read with auto precharge command bank a cax rby raz caz raz
etrontech 1m x 16 sdram em636165 46 rev. 1.0 aug. 2004 figure 16.3. auto precharge after read burst (burst length=4, cas# latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# a10 a0~a9 dqm dq a11 t ck3 activate command bank a bx0bx1bx2bx3ay1ay2 hi-z read command bank a rax rax rbx ax0 ax1ax2ax3ay0ay3by0 activate command bank b activate command bank b rbx cbx by1 by2 by3 high read with auto precharge command bank b read with auto precharge command bank a read with auto precharge command bank b cax rby cby rby cay we#
etrontech 1m x 16 sdram em636165 47 rev. 1.0 aug. 2004 figure 17.1. auto precharge after write burst (burst length=4, cas# latency=1) t0t 1t2t3t4t5t6t7t8t9t10t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck1 activate command bank a dbx0dbx1dbx2dbx3day1day2 hi-z write command bank a rax rax rbx dax0 dax1dax2dax3day0day3dby0 activate command bank b activate command bank b cbx cay dby1dby2dby3 high write with auto precharge command bank b write with auto precharge command bank a write with auto precharge command bank b rby caz cby rby daz0 daz0 activate command bank a write with auto precharge command bank a daz0daz0 cax rbx raz raz t 11
etrontech 1m x 16 sdram em636165 48 rev. 1.0 aug. 2004 figure 17.2. auto precharge after write burst (burst length=4, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# a10 a0~a9 dqm dq a11 t ck2 activate command bank a dbx0dbx1dbx2dbx3day1day2 hi-z write command bank a rax rax rbx dax0 dax1dax2dax3day0day3dby0 activate command bank b activate command bank b cbx cay dby1 dby2dby3 high write with auto precharge command ban k b write with auto precharge command bank a write with auto precharge command ban k b rby cby rby daz0 daz1 activate command bank a write with auto precharge command bank a daz2daz3 cax rbx caz raz raz we#
etrontech 1m x 16 sdram em636165 49 rev. 1.0 aug. 2004 figure 17.3. auto precharge after write burst (burst length=4, cas# latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck3 activate command bank a dbx0dbx1dbx2dbx3day1day2 hi-z write command bank a rax rax rbx dax0 dax1dax2dax3day0day3dby0 activate command bank b activate command bank b cbx dby1dby2dby3 high write with auto precharge command bank b write with auto precharge command bank a write with auto precharge command bank b cay cax rbx cby rby rby `
etrontech 1m x 16 sdram em636165 50 rev. 1.0 aug. 2004 figure 18.1. full page read cycle (burst length=full page, cas# latency=1) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 activate command bank a axax+1bx bx+1 bx+3bx+4 hi-z read command bank a rax rax rbx ax+1 ax+2 ax-2ax-1bx+2bx+5 activate command bank b burst stop command cbx high read command bank b precharge command bank b cax rbxrby rby ax bx+6bx+7 the burst counter wraps from the highest order page address back to zero during this time interval full page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bu rst in g b egi nni ng wi th the s tar tin g a dd res s. activate command bank b t ck1 t rrd t rp
etrontech 1m x 16 sdram em636165 51 rev. 1.0 aug. 2004 figure 18.2. full page read cycle (burst length=full page, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 activate command bank a axax+1bxbx+1bx+3bx+4 hi-z read command bank a rax rax ax+1 ax+2ax-2ax-1bx+2bx+5 activate command bank b burst stop c om ma nd cbx high read command bank b precharge command bank b rbx caxrby rby ax bx+6 the burst counter wraps from the highest order page address back to zero during this time interval full page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address. activate command bank b t ck2 t rp rbx
etrontech 1m x 16 sdram em636165 52 rev. 1.0 aug. 2004 figure 18.3. full page read cycle (burst length=full page, cas# latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 activate command bank a axax+1bxbx+1bx+3bx+4 hi-z read command bank a rax rax ax+1 ax+2ax-2ax-1bx+2bx+5 activate command bank b burst stop command cbx high read command bank b precharge command bank b rbx cax rby rby ax the burst counter wraps from the highest order page address back to zero du ring th is t ime in terv al full page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting beginning with the starting address. activate command bank b t ck3 t rp rbx
etrontech 1m x 16 sdram em636165 53 rev. 1.0 aug. 2004 figure 19.1. full page write cycle (burst length=full page, cas# latency=1) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 dax+1 dax activate command bank a hi-z activate command bank b rax rax burst stop command cbx high write command bank b precharge command bank b rbx cax rby rby the burst counter wraps from the highest order page address back to zero during this time interval full page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting be gin nin g wit h t he sta rt ing ad dre ss. activate command bank b t ck1 dax+2dax+3dax-1 dax dax+1 dbx dbx+1 dbx+2 dbx+3 dbx+4dbx+5 dbx+6dbx+7 write command bank a data is ignored rbx
etrontech 1m x 16 sdram em636165 54 rev. 1.0 aug. 2004 figure 19.2. full page write cycle (burst length=full page, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 dax+1 dax activate command bank a hi-z activate command bank b rax rax burst stop command cbx high write command bank b precharge command bank b rbx cax rby rby the burst counter wraps from the highest order page address back to zero during this time interval full page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting be gin nin g wit h t he sta rt ing ad dre ss. activate command bank b t ck2 dax+2dax+3dax-1 dax dax+1 dbx dbx+1 dbx+2 dbx+3 dbx+4dbx+5 dbx+6 write command bank a data is ignored rbx
etrontech 1m x 16 sdram em636165 55 rev. 1.0 aug. 2004 figure 19.3. full page write cycle (burst length=full page, cas# latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 dax+1 dax activate command bank a hi-z activate command bank b rax rax burst stop command cbx high rbx cax write command bank b precharge command bank b rby rby the burst counter wraps from the highest order page address back to zero during this time interval full page burst operation does not terminate when the burst length is satisfied; the burst counter increments and continues bursting be gin nin g wit h t he sta rt ing ad dre ss. activate command bank b t ck3 rbx dax+2dax+3dax-1 dax dax+1 dbx dbx+1 dbx+2 dbx+3 dbx+4dbx+5 write command bank a data is ignored
etrontech 1m x 16 sdram em636165 56 rev. 1.0 aug. 2004 figure 20. byte write operation (burst length=4, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 ldqm udqm a11 rax rax cay high cax t ck2 caz activate command bank a read command bank a upper 3 bytes are masked write command bank a upper 3 bytes are masked read command bank a lower byte is masked lower byte is masked lower byte is masked ax0ax1ax2 ax1ax2ax3 day1 day2 day0day1day3 az1az2 az1az2 az0 az3 dq0 - dq7 dq8 - dq15
etrontech 1m x 16 sdram em636165 57 rev. 1.0 aug. 2004 figure 21. random row read (interleaving banks) (burst length=2, cas# latency=1) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 high t ck1 bu0bu1au0au1bv0bv1av0av1bw0bw1aw0aw1bx0bx1ax0ax1by0by1ay0ay1bz0 activate command bank b read bank b with auto pr ec ha rge activate command bank a read bank a with auto pr ec ha rge activate command bank b read bank b with auto pr ec ha rge activate command bank a read bank a with auto pr ec ha rge activate command bank b read bank b with auto pr ec ha rge activate command bank a read bank a with auto pr ec ha rge activate command bank b read bank b with auto pr ec ha rge activate command bank a read bank a with auto pr ec ha rge activate command bank b read bank b with auto pr ec ha rge activate command bank a read bank a with auto pr ec ha rge activate command bank b read bank b with auto pr ec ha rge activate command bank a rbu rbu cbu rau raucau rbv rbv cbv rav rav cav rbw rbw cbw raw raw caw rbx rbx cbx rax raxcax rby rbycby ray raycay rbz rbzcbz raz raz t rp t rp t rp t rp t rp t rp t rp t rp t rp t rp begin auto precharge bank b begin auto precharge bank a begin auto precharge bank b begin auto precharge bank a begin auto precharge bank b begin auto precharge bank a begin auto precharge bank b begin auto precharge bank a begin auto precharge bank b begin auto precharge bank a
etrontech 1m x 16 sdram em636165 58 rev. 1.0 aug. 2004 figure 22. full page random column read (burst length=full page, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck2 ax0bx0ay0ay1by0by1az0az1az2bz0bz1bz2 activate command bank a read command bank a activate command bank b read command bank b read command bank b read command bank a read command bank b precharge command bank b (precharge temination) t rp read command bank a activate command bank b t rrd t rcd rax rax rbx rbxcax cbxcaycby caz cbz rbw rbw
etrontech 1m x 16 sdram em636165 59 rev. 1.0 aug. 2004 figure 23. full page random column write (burst length=full page, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck2 dax0dbx0day0day1dby0dby1daz0daz1daz2dbz0dbz1 dbz2 activate command bank a write command bank a activate command bank b write command bank b write command bank b write command bank a write command bank b precharge command bank b (precharge temination) t rp write command bank a activate command bank b t rrd t rcd rax rax rbx rbxcax cbxcaycby caz cbz rbw rbw t wr write data is mask ed
etrontech 1m x 16 sdram em636165 60 rev. 1.0 aug. 2004 figure 24.1. precharge termination of a burst (burst length=full page, cas# latency=1) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck1 dax0dax1dax2dax3dax4 ay0ay1ay2 daz3 daz2 daz0 activate command bank a write command bank a precharge command bank a read command bank a precharge command bank a write command bank a rax rax ray caxray cay raz daz1daz4daz5 daz6daz7 precharge termination of a write burst. write data is masked. activate command bank a activate command bank a t wr t rp t rp precharge termination of a read burst. raz caz
etrontech 1m x 16 sdram em636165 61 rev. 1.0 aug. 2004 figure 24.2. precharge termination of a burst (burst length=8 or full page, cas# latency=2) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck2 dax0dax1dax2dax3 ay2 ay0ay1 activate command bank a write command bank a precharge command bank a read command bank a precharge command bank a activate command bank a rax rax ray cax raycay az0az1az2 precharge termination of a write burst. write data is ma sked. activate command bank a t wr t rp t rp raz caz high read command bank a precharge command bank a precharge termination of a read burst t rp raz
etrontech 1m x 16 sdram em636165 62 rev. 1.0 aug. 2004 figure 24.3. precharge termination of a burst (burst length=4, 8 or full page, cas# latency=3) t0t 1t2t3t4t5t6t7t8t9t10t 11t12t13t14t15t16t17t18t19t20t21t22 clk cke cs# ras# cas# we# a10 a0~a9 dqm dq a11 t ck3 dax0 ay0ay1ay2 activate command bank a write command bank a precharge termination of a write burst read command bank a precharge command bank a rax rax ray cax ray cay write data is masked activate command bank a t wr t rp t rp raz raz high activate command bank a precharge command bank a precharge termination of a read burst dax1

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